Optical gain studies for dilute nitrides for application in broad band SOAs

Abstract

Summary form only given. GaInNAs/GaAs quantum wells emitting around 1300 nm have been the subject of intense interest for optical data- and tele-communications applications. Indeed the observation of 1550 nm emission with GaInNAsSb has increased their potential usefulness. Their ability to be made into VCSELs using AlGaAs-based DBRs, their high gain, high differential gain and their fast modulation speed offers much. The study of the material aspects of dilute nitride, where the nitrogen acts as a defect, not fully incorporating into the lattice, has been incorporated within the Band Anti-crossing (BAC) model. To derive gain from this model is fundamentally difficult requiring improved treatments which treat a complex band structure. In addition, spatial fluctuations of N cause a lowering of the conduction band and a possible trapping of electrons in these quantum-dot (QD)-like fluctuations. Also the position of the N within the QW affects the strength of its coupling to the conduction band.