High-performance complementary resistive switching in ferroelectric film

Abstract

The complementary resistive switch (CRS) offers a promising logic-in-memory functionality and is a potential solution to the “von Neumann bottleneck” problem, but the CRS structure composed of two anti-serially connected bipolar resistive switching cells limits device application. In this work, we report a high-performance CRS in a single layer of ferroelectric LiTaO₃ film. The device has continuous tunable steady-states, stable operating voltages, a maximum off/on ratio more than 10², good retention longer than 10⁵ s, and a good endurance of over 10⁷ cycles. Besides, the energy consumption of the CRS is tunable by defect engineering. Experiments suggest that the ferroelectric domain switching with charged domain walls possibly contributes to the stability of the CRS in LiTaO₃ film.