Intersubband Device Modeling of Gallium Nitride High Electron Mobility Transistor for Terahertz Applications
Open Access
- 2 December 2019
- journal article
- research article
- Published by American Geophysical Union (AGU) in Radio Science
- Vol. 54 (12), 1172-1180
- https://doi.org/10.1029/2019rs006844
Abstract
No abstract availableKeywords
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