Investigation of Radiation Hardening by Back-Channel Adjustment in PDSOI MOSFETs
- 23 September 2021
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 68 (11), 2609-2615
- https://doi.org/10.1109/tns.2021.3115116
Abstract
Total ionizing dose degradation is caused by radiation-induced charge buildup in oxides. Radiation hardening of SOI devices with deep submicron nodes or nano-nodes is mainly concerned with the field oxide and buried oxide. In this paper, a back-channel adjustment technique for TID hardening is proposed. The technique is compatible with the 130 nm PDSOI commercial process with no extra effort applied to the design. After testing the key electrical parameters and characterizing the radiation tolerance of the typical T-gate I/O NMOS devices, the results show that the radiation tolerance of the devices can reach more than 1 Mrad(Si) with the back-channel adjustment technique, and electrical performance is comparable to that of commercial process devices.Keywords
This publication has 14 references indexed in Scilit:
- An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-nm PDSOI I/O nMOSFETsIEEE Transactions on Nuclear Science, 2019
- 3D Numerical Simulation of a Z Gate Layout MOSFET for Radiation ToleranceMicromachines, 2018
- Radiation Hardening by the Modification of Shallow Trench Isolation Process in Partially Depleted SOI MOSFETsIEEE Transactions on Nuclear Science, 2018
- Enhanced Radiation Hardness in SOI MOSFET with Embedded Tunnel Diode LayerIEEE Transactions on Nuclear Science, 2017
- Tradeoff Between Low-Power Operation and Radiation Hardness of Fully Depleted SOI pMOSFET by Changing LDD ConditionsIEEE Transactions on Electron Devices, 2016
- Investigating the degradation mechanisms caused by the TID effects in 130nm PDSOI I/O NMOSNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2014
- Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar DevicesIEEE Transactions on Nuclear Science, 2013
- Bias dependence of TID radiation responses of 0.13μm partially depleted SOI NMOSFETsMicroelectronics Reliability, 2012
- Optimization of Back Channel Leakage Characteristic in PD SOI p-MOSFETJournal of the Electrochemical Society, 2010
- Radiation effects in SOI technologiesIEEE Transactions on Nuclear Science, 2003