Near-far IR photoconductivity damping in hyperdoped Si at low temperatures
- 20 October 2021
- journal article
- research article
- Published by Optica Publishing Group in Optical Materials Express
- Vol. 11 (11), 3792-3800
- https://doi.org/10.1364/ome.438023
Abstract
Silicon p-n junction photoelement fabricated on a p-doped wafer by sulfur-based n-doping of its sub-micron thick surface layer, exhibits at liquid-helium temperatures impurity based near-far IR (2-21 mu m) photoconductivity spectra in the form of well-resolved separate bands of neutral and ionized atomic-like and cluster-like sulfur centers. Temperature variation in the range of 5-105 K demonstrates first at lower temperatures < 35 K strong damping of IR photoconductivity related to cluster-like sulfur centers with ultralow activation energy approximate to 4 meV, corresponding to excitation of the lowest energy of Raman-active phonon in orthorhombic crystalline sulfur lattice. Further increase in temperature results in the next damping step above 85 K for all spectral bands above 1800 cm(-1) with higher activation energy approximate to 20 meV, representing the lowest energy of Raman-active vibration of octagon molecules in the crystalline sulfur. Broad near-far IR photosensitivity of the hyperdoped material, provided by the concentration-driven sulfur aggregation and quantum-level temperature control of its photoconductivity, paves the way for silicon photonics in far-IR and, possibly in the future, even THz spectral regions. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing AgreementKeywords
Funding Information
- Russian Foundation for Basic Research (18-29-20022)
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