A Robust and Efficient Compact Model for Phase-Change Memory Circuit Simulations
- 27 July 2021
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 68 (9), 4404-4410
- https://doi.org/10.1109/ted.2021.3098656
Abstract
A phase-change memory (PCM) model for robust and efficient simulations of circuits including neuromorphic ones is reported in this work. The features of a hysteretic dynamic resistance in the voltage domain, and the incubation in the crystallization, are covered in the model. The Landau-Khalatnikov (LK)-type equation for ferroelectric is used to develop the PCM hysteresis module. A voltage-controlled relaxation oscillation is successfully simulated for the Ge 2 Sb 2 Te 5 (GST) PCM. A technique of direct evaluation (DE) is then developed to reformulate the PCM model without any internal node. A significant enhancement of simulation efficiency is achieved compared with the traditional approach without sacrificing the accuracy. The functional correctness of the PCM device model and the acceleration effect in circuit simulations are verified.Keywords
Funding Information
- Natural Science Foundation of China (62074006)
- Major Scientific Instruments and Equipment Development (61927901)
- Shenzhen Science and Technology Project (GXWD20200827114656001)
- a grant from the Croucher Foundation
- Higher Education Discipline Innovation Project (B18001)
This publication has 31 references indexed in Scilit:
- A Double-Data- Rate 2 (DDR2) Interface Phase-Change Memory with 533MB/s Read -Write Data Rate and 37.5ns Access Latency for Memory-Type Storage Class Memory ApplicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2016
- NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learningPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2015
- Fast Crystallization of the Phase Change Compound GeTe by Large-Scale Molecular Dynamics SimulationsThe Journal of Physical Chemistry Letters, 2013
- Breaking the Speed Limits of Phase-Change MemoryScience, 2012
- Relaxation oscillations in chalcogenide phase change memoryJournal of Applied Physics, 2010
- Phase change memory technologyJournal of Vacuum Science & Technology B, 2010
- A unified model of nucleation switchingApplied Physics Letters, 2009
- Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale DevicesNano Letters, 2007
- Electronic Switching in Phase-Change MemoriesIEEE Transactions on Electron Devices, 2004
- Simple model of spiking neuronsIEEE Transactions on Neural Networks, 2003