Phase-change heterostructure enables ultralow noise and drift for memory operation
- 11 October 2019
- journal article
- research article
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 366 (6462), 210-215
- https://doi.org/10.1126/science.aay0291
Abstract
Artificial intelligence and other data-intensive applications have escalated the demand for data storage and processing. New computing devices, such as phase-change random access memory (PCRAM)–based neuro-inspired devices, are promising options for breaking the von Neumann barrier by unifying storage with computing in memory cells. However, current PCRAM devices have considerable noise and drift in electrical resistance that erodes the precision and consistency of these devices. We designed a phase-change heterostructure (PCH) that consists of alternately stacked phase-change and confinement nanolayers to suppress the noise and drift, allowing reliable iterative RESET and cumulative SET operations for high-performance neuro-inspired computing. Our PCH architecture is amenable to industrial production as an intrinsic materials solution, without complex manufacturing procedure or much increased fabrication cost.Keywords
Funding Information
- Deutsche Forschungsgemeinschaft (SFB7)
- National Natural Science Foundation of China (61622408)
- National Natural Science Foundation of China (61774123)
- National Natural Science Foundation of China (11474249)
- National 973 Program of China (2015CB654901)
- Science and Technology Foundation of Shenzhen (JCYJ20180507182248605)
- Major Provincial Basic Research Program of Guangdong (2017KZDXM070)
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