Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy
- 15 July 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (3), 490-492
- https://doi.org/10.1063/1.1493229
Abstract
Electroabsorption measurements are reported for wurtzite InGaN/GaN quantum wells. The electroabsorption technique allows exact quantitative analysis of absorption and absorption changes in InGaN quantum wells and barrier layers, with recorded field-induced absorption changes as large as 7000 cm−1 below and almost 20000 cm−1 above the band edge. The technique thus allows precise determination of the strong internal fields that originate from strain-induced polarization and differences in spontaneous polarization. The fields measured on functioning diodes vary between 1.1 and 1.4 MV/cm for indium concentrations in InGaN quantum wells ranging from 7% to 9%.This publication has 7 references indexed in Scilit:
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