Simulation of Hall field elements based on nanoscale silicon-on-insulator heterostructures

Abstract

The article is devoted to the issues of numerical simulation of field Hall sensors based on the "silicon on insulator" structure with two control gates. To solve the problem, a two-level local-one-dimensional computational model is used. At the first level, a series of one-dimensional Schrödinger—Poisson equations are solved, which describe the distribution of the electron density across the heterostructure in different sections. The obtained information is transmitted to the second level, where the current characteristics of the element are calculated. The numerical simulation results are compared with the experimental data obtained for field Hall sensors. Comparative analysis shows good agreement between calculated and experimental data. The developed computer model makes it possible to carry out a multivariate analysis of various heterostructures, which creates the basis for optimizing devices of the class under consideration.