Universal Theory and Basic Rules of Strain-Dependent Doping Behaviors in Semiconductors
- 1 September 2021
- journal article
- research article
- Published by IOP Publishing in Chinese Physics Letters
Abstract
Enhancing the dopability of semiconductors via strain engineering is critical to improving their functionalities, which is, however, largely hindered by the lack of basic rules. In this study, for the first time, we develop a universal theory to understand the total energy changes of point defects (or dopants) with different charge states under strains, which can exhibit either parabolic or superlinear behaviors, determined by the size of defect-induced local volume change (Δ V). In general, Δ V increases (decreases) when an electron is added (removed) to (from) the defect site. Consequently, in terms of this universal theory, three basic rules can be obtained to further understand or predict the diverse strain-dependent doping behaviors, i.e., defect formation energies, charge-state transition levels, and Fermi pinning levels, in semiconductors. These three basic rules could be generally applied to improve the doping performance or overcome the doping bottlenecks in various semiconductors.Keywords
This publication has 46 references indexed in Scilit:
- Strain-controlled oxygen vacancy formation and ordering in CaMnOPhysical Review B, 2013
- Strain-engineered artificial atom as a broad-spectrum solar energy funnelNature Photonics, 2012
- Epitaxial Strain-Induced Chemical Ordering in La0.5Sr0.5CoO3−δ Films on SrTiO3Chemistry of Materials, 2011
- First-principles study of electronic properties of biaxially strained silicon: Effects on charge carrier mobilityPhysical Review B, 2008
- Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistorsJournal of Applied Physics, 2007
- Elastic constants of defected and amorphous silicon with the environment-dependent interatomic potentialPhysical Review B, 2004
- Overcoming the doping bottleneck in semiconductorsComputational Materials Science, 2004
- Alloy effects in boron doped Si-rich SiGe bulk crystalsJournal of Applied Physics, 1998
- Doping of ZnTe by molecular beam epitaxyApplied Physics Letters, 1994
- Electrical and structural characterization of boron-doped Si1−xGex strained layersJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994