Temperature impact on device characteristics of charge plasma based tunnel FET with Si0.5Ge0.5 source
- 19 October 2021
- journal article
- research article
- Published by IOP Publishing in Engineering Research Express
- Vol. 3 (4), 045012
- https://doi.org/10.1088/2631-8695/ac310e
Abstract
In this work, the impact of temperature is investigated on the electrical characteristics of charge plasma-based doping-less double gate tunnel FET (DL-DG-TFET) with a low bandgap source material i.e., Si0.5Ge0.5. The influence of temperature (from 250 K to 450 K) is analysed on several performance parameters of the device such as bandgap, threshold voltage, SS, switching current ratio, ID-VGS, ID-VDS, gate current. The small change in energy bandgap with temperature reflects that device is minimally dependent on temperature. Temperature impact is significant on the sub-threshold region of transfer characteristics due to SRH recombination and trap-assisted tunnelling current. Insignificant variation of gate current with temperature signifies the better reliability of the device. Further, temperature effect is observed on analog parameters such as cut-off frequency, gate capacitance, trans-conductance, output conductance, power delay product (PDP). The minimal variation of analog parameters with temperature assures application of device in high-temperatures.Keywords
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