Impact of process-induced variability on multi-bit phase change memory devices
- 1 December 2022
- journal article
- research article
- Published by Elsevier BV in Microelectronics Journal
Abstract
No abstract availableThis publication has 34 references indexed in Scilit:
- Phase Change Memory: Device scaling and challenges for material engineering in the GeSbTe compound systemMicroelectronic Engineering, 2015
- Dynamic Wear Leveling for Phase-Change Memories With Endurance VariationsIEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2014
- Phase change memory technologyJournal of Vacuum Science & Technology B, 2010
- Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°CJournal of Applied Physics, 2010
- Threshold switching and phase transition numerical models for phase change memory simulationsJournal of Applied Physics, 2008
- Crystallization properties of ultrathin phase change filmsJournal of Applied Physics, 2008
- Phase-change materials for rewriteable data storageNature Materials, 2007
- Three-dimensional simulation model of switching dynamics in phase change random access memory cellsJournal of Applied Physics, 2007
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968
- THE DESIGN OF OPTIMUM MULTIFACTORIAL EXPERIMENTSBiometrika, 1946