Impact of interface-traps on TDDB lifetime by distorting the Weibull slope
- 1 July 2017
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Abstract
In this study, impact of traps located at SiO2/Si interface on the time-dependent dielectric breakdown (TDDB) lifetime is investigated by modeling the Weibull distribution in high-k (HK) dielectric stacks. The results show that the interface traps will cause the distortion of Weibull slope of TDDB lifetime, decreasing the growing rate of the probability of breakdown after a long time.Keywords
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