Modeling and simulation of GaAsPN / GaP quantum dot structure for solar cell in intermediate band solar cell applications
- 1 August 2021
- journal article
- research article
- Published by Hindawi Limited in International Journal of Energy Research
- Vol. 46 (8), 10133-10142
- https://doi.org/10.1002/er.7114
Abstract
This effort is founded on the modeling and simulation of the GaAsPN/GaP quantum dot (QD) solar cell. This quaternary alloy is one of the III-V semiconductors, which gained importance in the recent years for optoelectronic applications. This importance comes from the fact that the quaternary GaAsPN can be a well-grown lattice matched to GaP and Si substrates and to the bandgap that can be decreased drastically with the incorporation of nitrogen and arsenic into GaP, improving consequently the absorption and the wavelengths near the red part. These qualities make GaAsPN a good candidate for the growth on the Si substrate and low-cost solar cell fabrication. The optical properties of GaAsPN/GaP QDs, such as strain, critical thickness, bandgap energy, the external quantum efficiency, and absorption coefficient, have been reported. The heterostructures consist of GaAs0.18P0.814N0.006 QDs separated by GaP barrier layers. The width and thickness of QDs are about 5 and 5 nm, respectively. Our results have been shown that 20 GaAs0.18P0.814N0.006/GaP QD layers produce a short-circuit current of about 3.55 mA/cm2 and an efficiency of about 7.5%. In addition, we will be able to extend the absorption edge of a GaP solar cell from 0.48 μm to 0.5 μm for the same QD number layers inserted. The temperature effect on efficiency is considered.This publication has 31 references indexed in Scilit:
- Optical properties of quantum-confined heterostructures based on GaP x N y As1 − x − y alloysSemiconductors, 2011
- Conduction and valence band positions versus the Fermi‐level stabilization energy in quaternary dilute nitridesphysica status solidi (c), 2011
- Effect of on band alignment of compressively strained Ga1−xInxNy As1−y−zSbz/GaAs quantum well structuresPhysica E: Low-dimensional Systems and Nanostructures, 2010
- Dilute nitride Ga(NAsP)/GaP‐heterostructures: toward a material development for novel optoelectronic functionality on Si‐substratePhysica Status Solidi (b), 2007
- Parameterization of the band gap energy for GaNxAs1−x−zPz alloysJournal of Applied Physics, 2007
- Self-consistent modeling of escape and capture of carriers in quantum wellsPhysica E: Low-dimensional Systems and Nanostructures, 2006
- Modeling of multiple-quantum-well solar cells including capture, escape, and recombination of photoexcited carriers in quantum wellsIEEE Transactions on Electron Devices, 2003
- Band anticrossing in highly mismatched III V semiconductor alloysSemiconductor Science and Technology, 2002
- Band Anticrossing in GaInNAs AlloysPhysical Review Letters, 1999
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964