Improving the photoelectrical characteristics of self-powered p-GaN film/n-ZnO nanowires heterojunction ultraviolet photodetectors through gallium and indium co-doping
- 29 July 2020
- journal article
- research article
- Published by Elsevier BV in Materials Science in Semiconductor Processing
- Vol. 121, 105295
- https://doi.org/10.1016/j.mssp.2020.105295
Abstract
No abstract availableKeywords
Funding Information
- Ministerio de Ciencia y Tecnología
- Feng Chia University
- Ministry of Science and Technology, Taiwan (MOST 107-2221-E-035-014)
This publication has 48 references indexed in Scilit:
- A Self‐Powered ZnO‐Nanorod/CuSCN UV Photodetector Exhibiting Rapid ResponseAdvanced Materials, 2012
- Self‐Powered, Ultrafast, Visible‐Blind UV Detection and Optical Logical Operation based on ZnO/GaN Nanoscale p‐n JunctionsAdvanced Materials, 2010
- Single ZnO Nanowire/p‐type GaN Heterojunctions for Photovoltaic Devices and UV Light‐Emitting DiodesAdvanced Materials, 2010
- Fabrication of a White-Light-Emitting Diode by Doping Gallium into ZnO Nanowire on a p-GaN SubstrateThe Journal of Physical Chemistry C, 2010
- Novel fabrication of UV photodetector based on ZnO nanowire/p-GaN heterojunctionChemical Physics Letters, 2009
- Hydrothermal growth of ZnO nanostructuresScience and Technology of Advanced Materials, 2009
- ZnO Nanowire UV Photodetectors with High Internal GainNano Letters, 2007
- Comparative Structure and Optical Properties of Ga-, In-, and Sn-Doped ZnO Nanowires Synthesized via Thermal EvaporationThe Journal of Physical Chemistry B, 2005
- Orientation-enhanced growth and optical properties of ZnO nanowires grown on porous silicon substratesNanotechnology, 2005
- Room-Temperature Ultraviolet Nanowire NanolasersScience, 2001