Junction Temperature Measurement Method for Thermal Resistance Testing of SiC MOSFET Module
Open Access
- 1 May 2021
- journal article
- research article
- Published by IOP Publishing in Journal of Physics: Conference Series
- Vol. 1907 (1), 012012
- https://doi.org/10.1088/1742-6596/1907/1/012012
Abstract
The internal anti-parallel Schottky barrier diode threshold voltage of SiC metal-oxide-semiconductor field-effect transistor (MOSFET) modules is less than that of their body diodes, which prevents the use of the body diode voltage drop to measure junction temperature. In this paper, a thermal resistance test of the SiC MOSFET module is proposed based on the onstate voltage drop as a temperature-sensitive electrical parameter. Measurements are performed with the method and its feasibility evaluated. The on-state voltage drop temperature sensitivity under different gate voltages and the repeatability of the on-state voltage drop parameters before and after electric power heating in the thermal resistance tests are studied. The on-state voltage drop is measured under a high gate voltage and the accuracy of junction temperature measurement improves when the grid voltage remains the same during heating and measurement.This publication has 4 references indexed in Scilit:
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