Metal–insulator transition at room temperature and infrared properties of Nd0.7Eu0.3NiO3 thin films
- 16 July 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (4), 619-621
- https://doi.org/10.1063/1.1493645
Abstract
thin films are deposited by rf sputtering and subsequent oxygen pressure annealing on (100) oriented silicon substrate. We characterize the thermochromic properties of films by measuring electrical transition, infrared transmittance, and reflectance. The thermochromic effect at room temperature is observed. Resistivity measurements exhibit a sharper hysteresis loop than is usually observed in thin films. Infrared properties in the 8–14 μm wavelength range spectra reveal a contrast of 30% in reflectance and 55% in transmittance.
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