Dielectric effect induced by the barrier layers in Ni-doped KTaO3
- 22 August 2011
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 99 (8), 082902
- https://doi.org/10.1063/1.3629771
Abstract
A dielectric constant of over 100 000, with dielectric loss of less than 0.1, was found in 1.0 mol. % Ni-doped KTaO3 (KT:1%Ni) single crystals, showing temperature and frequency stabilities favorable for capacitor applications. The dielectric constant was found to depend on the electrode material, and Ag electrodes markedly enhanced the dielectric properties. This result indicates that the giant effective dielectric constant is due to a non-Ohmic electrode contact with a semiconducting KT:1%Ni.This publication has 12 references indexed in Scilit:
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