Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors
Open Access
- 14 October 2019
- Vol. 12 (20), 3341
- https://doi.org/10.3390/ma12203341
Abstract
The limited choice of materials for large area electronics limits the expansion of applications. Polycrystalline silicon (poly-Si) and indium gallium zinc oxide (IGZO) lead to thin-film transistors (TFTs) with high field-effect mobilities (>10 cm2/Vs) and high current ON/OFF ratios (IOn/IOff > ~107). But they both require vacuum processing that needs high investments and maintenance costs. Also, IGZO is prone to the scarcity and price of Ga and In. Other oxide semiconductors require the use of at least two cations (commonly chosen among Ga, Sn, Zn, and In) in order to obtain the amorphous phase. To solve these problems, we demonstrated an amorphous oxide material made using one earth-abundant metal: amorphous tin oxide (a-SnOx). Through XPS, AFM, optical analysis, and Hall effect, we determined that a-SnOx is a transparent n-type oxide semiconductor, where the SnO2 phase is predominant over the SnO phase. Used as the active material in TFTs having a bottom-gate, top-contact structure, a high field-effect mobility of ~100 cm2/Vs and an IOn/IOff ratio of ~108 were achieved. The stability under 1 h of negative positive gate bias stress revealed a Vth shift smaller than 1 V.Funding Information
- Ministry of Trade, Industry and Energy (10052044)
This publication has 29 references indexed in Scilit:
- Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and CircuitsAdvanced Materials, 2018
- Review of recent advances in flexible oxide semiconductor thin-film transistorsJournal of Information Display, 2017
- Metal oxides for optoelectronic applicationsNature Materials, 2016
- Effect Of Channel Layer Thickness On The Performance Of Indium–Zinc–Tin Oxide Thin Film Transistors Manufactured By Inkjet PrintingACS Applied Materials & Interfaces, 2014
- The role of solution-processed high-κ gate dielectrics in electrical performance of oxide thin-film transistorsJournal of Materials Chemistry C, 2014
- Oxide Semiconductor Thin‐Film Transistors: A Review of Recent AdvancesAdvanced Materials, 2012
- High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol–gel methodJournal of Materials Chemistry, 2011
- Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ processNature Materials, 2010
- Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistorsNature Materials, 2009
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductorsNature, 2004