Power Loss Reduction of N-Channel 10-kV SiC IGBTs With Box Cell Layout
- 5 June 2023
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 70 (7), 3768-3773
- https://doi.org/10.1109/ted.2023.3279799
Abstract
We investigated the power loss reduction of an n-channel 4H-silicon carbide (SiC) insulated-gate bipolar transistor (IGBT) with a blocking voltage of 10 kV by utilizing a box cell layout, which can enhance the conductivity modulation, instead of a conventional string cell layout. The box cell layout significantly reduced the on-voltage of SiC IGBTs, which are a 35% and 29% reduction in the specific differential on-resistance at 25 $^{\circ}$ C and 150 $^{\circ}$ C, respectively. Although enhancing the conductivity modulation should increase the turn-off loss, it has increased slightly, by 10% at 25 $^{\circ}$ C and by 5% at 150 $^{\circ}$ C with a load current of 250 A/cm $^{\text{2}}$ because the box cell layout can enhance the stored carrier, particularly near the emitter in the on-state. In contrast to the turn-off loss, turn-on loss was reduced by the box cell layout due to the enhancement of electron injection from the emitter, resulting in a lower total switching loss in comparison to a string-layout device. A lower on-voltage and switching loss of SiC IGBTs have both been achieved as a result of the box cell layout enhancing conductivity modulation enhancement.Keywords
Funding Information
- Innovative Science and Technology Initiative for Security, Acquisition, Technology & Logistics Agency (ATLA), Japan (JPJ004596)
This publication has 23 references indexed in Scilit:
- 6.5 kV n-Channel 4H-SiC IGBT with Low Switching Loss Achieved by Extremely Thin Drift LayerMaterials Science Forum, 2016
- Material science and device physics in SiC technology for high-voltage power devicesJapanese Journal of Applied Physics, 2015
- 10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2014
- An injection efficiency model to characterize the injection capability and turn-off speed for >10kV 4H-SiC IGBTsSolid-State Electronics, 2014
- 100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET ModulesMaterials Science Forum, 2009
- Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching DevicesMaterials Science Forum, 2006
- 10-kV, 123-m$Omega cdot $cm$^2$4H-SiC Power DMOSFETsIEEE Electron Device Letters, 2004
- High-power 4H-SiC JBS rectifiersIEEE Transactions on Electron Devices, 2002
- High temperature static and dynamic characteristics of 3.7 kV high voltage 4H-SiC JBSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivationApplied Surface Science, 2001