Effective drive current in steep slope FinFET (vs. conventional FinFET)
- 9 October 2017
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 111 (15)
- https://doi.org/10.1063/1.4998508
Abstract
With the negative capacitance (NC) effect of ferroelectric materials, a sub-60-mV/decade sub-threshold slope in a conventional field-effect transistor has been theoretically and experimentally demonstrated. In order to utilize the NC for complementary metal-oxide-semiconductor logic device applications, it is necessary to closely examine various parameters for the device performance. Specifically, the analysis of effective drive current (i.e., Ieff = {IDS@[VDS = 0.5VDD, VG = VDD] + IDS@[VDS =VDD, VG = 0.5VDD]}/2) of the NC device is vital. In this work, Ieff of a NC fin field-effect transistor (FinFET), in which a baseline 70 nm FinFET is electrically integrated with a ferroelectric capacitor, is experimentally measured to explore the correlation between hysteresis and Ieff.Funding Information
- National Research Foundation of Korea (2017R1A2A2A05069708)
- MOTIE | Korea Evaluation Institute of Industrial Technology (10067746)
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