Zirconium Aided Epitaxial Growth of InxSey on InP(111) Substrates

Abstract

Layered material indium selenide (In _x Se _y ) is a promising candidate for building next-generation electronic and photonic devices. We report a zirconium aided MBE growth of this van der Waals material. When co-depositing zirconium and selenium onto an indium phosphide substrate with a substrate temperature of 400°C at a constant zirconium flux rate of 0.01 ML/min, the polymorphic In _x Se _y layer emerges on top of the insulating ZrSe₂ layer. Different archetypes, such as InSe, α-In₂Se₃ and β-In₂Se₃, are found in the In _x Se _y layers. A negative magnetoresistance of 40% at 2K under 9T magnetic field is observed. Such an In _x Se _y /ZrSe₂ heterostructure with good lattice-matching may serve as a candidate for device applications.