Two-dimensional (2D) nanomaterials have captured a great deal of attention recently, with most of the focus on improving the functionality of devices. Molybdenum disulfide (MoS2) is a type of transition metal dichalcogenide (TMD) with an indirect band gap. However, a 2D monolayer of MoS2 has a direct band gap [1]. 2D films of MoS2 have a multitude of features such as high strength, flexibility and has better quantum yield than bulk MoS2 [2]. 2D films of MoS2 can be widely used in various devices for their electronic, optical, and catalytic properties [3]. In this work MoS2 nanoflakes were prepared and studied using atomic force microscopy (AFM) microscopy. The initial bulk MoS2 was in two forms, powder and crystal, which were used to prepare the nanoparticles and flakes respectively. The preparation of the nanoparticles was done by dispersing 0.5 g of MoS2 powder in 50 mL NMP (N-Methyl-2-Pyrrolidone) followed by sonicating the mixture for 6 hours using an ultra probe-sonicator at 10 s / 2 s duty cycle in an ice bath, and then centrifuging at 1500 rpm for 60 min to filter the unexfoliated particles and at 7500 rpm for 30 min to remove the insoluble impurities. This caused the MoS2 nanoparticles to precipitate on the wall of the centrifuge tube and after filtering, the nanoparticles were deposited via drop casting on a Si wafer. The preparation procedure for the MoS2 nano flakes was by a simple exfoliation technique which uses scotch tape. Part of the bulk MoS2 crystal is placed on the sticky part of the tape and the tape is then folded on the MoS2 piece with the scotch tape surrounding the crystal on the top and bottom. The tape is then separated from each other, which results in exfoliation of the MoS2 into flakes. The more the steps are repeated of this process, the thinner the flakes are. The flakes on the tape were transferred to a Si wafer. The achieved MoS2 nanoflakes on Si wafer were then imaged using AFM microscopy and conductive measurements. The AFM images was done to identify the distribution of the flakes and nanoparticles. AFM images showed clear flakes on the Si wafer at which they were distributed randomly over the surface. Furthermore, conductive AFM was employed to obtain the IV curve over the flake and obtain the electrical properties of the flakes, where forward and reverses scanning was done that showed hysteresis loop. The hysteresis observed showed good gap in the loop indicating high voltage difference that is useful for devices such as non-volatile memory, perovskite solar cells, modulators and many other electronics. References [1] E. Zhang, W. Wang, C. Zhang, Y. Jin, G. Zhu, Q. Sun, D. W. Zhang, P. Zhou, and F. Xiu, "Tunable Charge-Trap Memory Based on Few-Layer MoS2," ACS Nano, vol. 9, no. 1, pp. 612–619, Dec. 2014. [2] R. Ganatra and Q. Zhang, "Few-Layer MoS2: A Promising Layered Semiconductor," ACS Nano, vol. 8, no. 5, pp. 4074–4099, 2014. [3] L. Muscuso, S. Cravanzola, F. Cesano, D. Scarano, and A. Zecchina, "Optical, Vibrational, and Structural Properties of MoS2Nanoparticles Obtained by Exfoliation and Fragmentation via Ultrasound Cavitation in Isopropyl Alcohol," The Journal of Physical Chemistry C, vol. 119, no. 7, pp. 3791–3801, 2015.