Temperature-Dependent Gate Degradation of $p$-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress
- 1 May 2019
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Abstract
This paper experimentally investigates the time-dependent gate degradation of Schottky-type p-GaN gate transistors subjected to positive gate voltage stress. By means of combined static/dynamic gate stress and temperature-dependent analysis, the dependence of time-to-breakdown ( tBD) on stress mode and temperature are unveiled. It is demonstrated that tBD is Weibull distributed and the mean-time-to-failure (MTTF) is comparable under static and dynamic stress conditions. Both the gate breakdown voltage and MTTF exhibit positive temperature dependence. The maximum applicable gate voltage for a 10-year lifetime is extrapolated at different stress conditions. Moreover, the mechanism of the gate degradation is discussed by comparing the devices' performance before and after the progressive breakdown. It is revealed that electrons accelerated in the depletion region of the p-GaN layer under large forward gate bias would gain enough energy and induce defects near the metal/ p-GaN interface, resulting in the time-dependent gate degradation.Keywords
This publication has 15 references indexed in Scilit:
- Reliability of hybrid-drain-embedded gate injection transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2017
- GaN-on-Si Power Technology: Devices and ApplicationsIEEE Transactions on Electron Devices, 2017
- A fundamental AC TDDB study of BEOL ELK in advanced technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2016
- Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTsIEEE Electron Device Letters, 2016
- Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design ConsiderationsIEEE Transactions on Power Electronics, 2016
- Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility TransistorsIEEE Electron Device Letters, 2015
- Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drainPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2015
- The physical mechanism investigation of AC TDDB behavior in advanced gate stackPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2014
- p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate CurrentIEEE Electron Device Letters, 2013
- Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity ModulationIEEE Transactions on Electron Devices, 2007