Gradient magnetron co-sputtered μ m-thick Al–Si films on dielectric substrates for operation in the millimeter-wave band
- 18 October 2021
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 119 (16), 161906
- https://doi.org/10.1063/5.0058572
Abstract
Ongoing active development of modern radio frequency electronic devices operating in the millimeter (V) band, such as fifth-generation wireless communications, demands new materials to control electromagnetic interference, compatibility, and reliability of such systems. This work investigates feasibility absorptive non-reflective thin coatings deposition on dielectric substrates using simultaneous magnetron co-deposition. For this, electromagnetic waves propagation in the millimeter band through in micrometer-thick Al–Si films of varied composition was studied. The co-deposition process was controlled by the ratio of sputtered atoms fluxes. Graded segregation was observed under certain parameters of the co-deposition process, resulting in a depth gradient of an aluminum content, as confirmed by the secondary ion mass spectrometry study. A qualitative model was proposed involving aluminum-induced silicon recrystallization happening in the course of a known aluminum interlayer exchange process. The observed Al–Si segregation effect in micrometer-thick films allows for preparation of the non-reflective and absorptive material for operation in the V-band with reflection losses more than 10 dB and transmission losses around 5 dB in the bandwidth of up to 20 GHz.Funding Information
- Russian Foundation for Basic Research (20-07-00929)
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