Schottky Barrier Height Modulation of Zr/p-Diamond Schottky Contact by Inserting Ultrathin Atomic Layer-Deposited Al2O3
- 13 October 2021
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 68 (12), 5995-6000
- https://doi.org/10.1109/ted.2021.3117897
Abstract
We fabricated Zr/p-diamond Schottky barrier diodes (SBDs) with and without a ultrathin atomic layer-deposited Al 2 O 3 interlayer. The effects of the Al 2 O 3 interlayer on the electrical properties of devices were investigated using the current–voltage ( ${I}-{V}$ ) and capacitance–voltage ( ${C}-{V}$ ) characteristics at room temperature. Compared with Zr/p-diamond SBDs without the interlayer, SBDs with a 2-nm-thick Al 2 O 3 interlayer exhibited higher Schottky barrier height and breakdown voltage. The insertion of the Al 2 O 3 layer effectively reduced the interface state and it is considered that the barrier enhancement is attributed to the significant reduction of interface state density. This work provides a simple method to passivate the diamond surface and modulate the barrier heights of diamond SBDs.Keywords
Funding Information
- National Key Research and Development Program of China (2018YFE0125900)
- Natural Science Basic Research Program of Shaanxi (2021JQ062, 2021JQ056, 2021GY223)
- National Natural Science Foundation of China (61627812, 61804122, 62074127)
- China Postdoctoral Science Foundation (2019M660256, 2020M683485)
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