New Search

Export article
Open Access

Effect of selenization time on optical, electrical properties and structure of CZTSSe thin films

Tuấn Anh Đào, Kiều Loan Phan Thị, Tuấn Hùng Lê Vũ, Hữu Kế Nguyễn
Science and Technology Development Journal - Natural Sciences , Volume 5; doi:10.32508/stdjns.v5i1.905

Abstract: In this paper, we present a fabrication process of high crystallinity CZTSSe absorber layer. The CZTS structure is firstly prepared by spin-coating method, and then the film is converted into CZTSSe via selenization process using graphite box and tube furnace. The Se powder has been loaded into graphite box and used as source of selenizing vapors. Keeping the annealing temperature as constant, the structural, optical, electrical properties, and composition of CZTSSe thin films are investigated by changing the annealing time. X-ray diffraction revealed that these thin films are high crystallinity and strong preferential orientation along the (112) direction. The Raman spectra show the presence of the kesterite CZT Se phase which confirm the linkage of Se in structure. The band gaps (Eg) of the CZT Se thin films varied from 1,19 to 1.62 eV depend on the selenization times. At optimal annealing times, the p-type CZTSSe film has bandgap energy, hole concentration, and resistivity of 1,19 eV, 2,68 x 1019 cm-3 and 0,86Ω.cm respectively which are suitable for photovoltaic application.
Keywords: graphite / structure / thin films / optimal / Box / CZTSSe / selenization

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

Share this article

Back to Top Top