Effect of Thickness and Temperature of SiO2 Layer on Leakage Currents in MOS Capacitor Materials with High Dielectric Constant by Involving the Charge Trap
- 7 August 2014
- journal article
- Published by UPT Penerbitan Universitas Jember in Jurnal ILMU DASAR
- Vol. 15 (1), 1
- https://doi.org/10.19184/jid.v15i1.642