Research on Thermal Characteristics of IGCT Based on Structure Function

Abstract

According to the principle of heat conduction during the operation of semiconductor devices, a GCT package model of IGCT devices is established. Perform transient simulation and use structure function analysis software for analysis. Based on the thermal resistance and heat capacity curve obtained by the structure function analysis method, the factors that may affect the thermal characteristics of the device are analyzed from the two angles of the thickness of the molybdenum disk and the thickness of the copper cathode. Thermal analysis of the 1μm micro-gap on the surface of the molybdenum disk and suggestions for improvement were put forward. The research results show that the structure function method is a non-destructive analysis method that can obtain the thermal resistance and heat capacity of each layer inside the device with high accuracy. The application of this method can analyze the internal microstructure changes of the device, and provide convenience for the research and evaluation of the thermal characteristics of the device.