Effect of Ni, N Co-Doped on Properties of AgSnO2 Contact Materials

Abstract

The first-principles method based on density functional theory was used to analyze the impurity formation energies, energy bands, density of states, electron overlap population and elastic modulus of SnO₂, SnO₂–Ni, SnO₂–N and SnO₂–Ni–N. SnO₂ powders with different additives were prepared by the sol-gel method, and then X-ray diffraction experiments and wettability experiments were carried out. The powder metallurgy method was used to prepare AgSnO₂ contacts with different additives. The simulation experiments on hardness, electrical conductivity and electrical contact were carried out. The simulation results show that the conductivity of Ni–N co-doped SnO₂ is best, and more impurity levels are introduced into the forbidden band, thereby increasing the carrier concentration, reducing the band gap, and improving the conductivity. The experimental results show that Ni, N doping does not change the structure of SnO₂, so doped SnO₂ still belongs to the tetragonal system. Ni–N co-doping can better improve the wettability between SnO₂ and Ag, reduce the accumulation of SnO₂ on the contact surface and reduce the contact resistance. Ni–N co-doped SnO₂ has the smallest hardness, improving ductility, molding and service life of the AgSnO₂ contact material.